Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
80 V
Tip pachet
TO-263
Timp montare
Surface Mount
Numar pini
7
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.31mm
Typical Gate Charge @ Vgs
155 nC @ 10 V
Latime
9.45mm
Transistor Material
Si
Serie
OptiMOS 3
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
4.57mm
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
2
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
2
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
80 V
Tip pachet
TO-263
Timp montare
Surface Mount
Numar pini
7
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.31mm
Typical Gate Charge @ Vgs
155 nC @ 10 V
Latime
9.45mm
Transistor Material
Si
Serie
OptiMOS 3
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
4.57mm


