Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
IPB017N10N5
Tip pachet
TO-263
Montare
Surface Mount
Numar pini
7 + Tab
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
11.05mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.31mm
Typical Gate Charge @ Vgs
168 nC @ 10 V
Inaltime
4.57mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
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5
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
IPB017N10N5
Tip pachet
TO-263
Montare
Surface Mount
Numar pini
7 + Tab
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
11.05mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.31mm
Typical Gate Charge @ Vgs
168 nC @ 10 V
Inaltime
4.57mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V