Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220 FP
Dimensiune celula
CoolMOS CE
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.9mm
Temperatura maxima de lucru
+150 °C
Lungime
11.3mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Inaltime
16.27mm
Forward Diode Voltage
0.9V
Temperatura minima de lucru
-40 °C
Tara de origine
China
Detalii produs
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,75
Each (In a Tube of 450) (fara TVA)
€ 0,892
Each (In a Tube of 450) (cu TVA)
450
€ 0,75
Each (In a Tube of 450) (fara TVA)
€ 0,892
Each (In a Tube of 450) (cu TVA)
450
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
450 - 450 | € 0,75 | € 337,50 |
900 - 900 | € 0,69 | € 310,50 |
1350+ | € 0,64 | € 288,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220 FP
Dimensiune celula
CoolMOS CE
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.9mm
Temperatura maxima de lucru
+150 °C
Lungime
11.3mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Inaltime
16.27mm
Forward Diode Voltage
0.9V
Temperatura minima de lucru
-40 °C
Tara de origine
China
Detalii produs
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.