Infineon IKW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

Nr. stoc RS: 145-9416Producator: InfineonCod de producator: IKW30N60H3FKSA1
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Specificatii

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

187 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1630pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.72mJ

Tara de origine

Malaysia

Detalii produs

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Informatii despre stoc temporar indisponibile.

Incercati din nou mai tarziu

Informatii despre stoc temporar indisponibile.

€ 2,89

Each (In a Tube of 30) (fara TVA)

€ 3,439

Each (In a Tube of 30) (cu TVA)

Infineon IKW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

€ 2,89

Each (In a Tube of 30) (fara TVA)

€ 3,439

Each (In a Tube of 30) (cu TVA)

Infineon IKW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
Informatii despre stoc temporar indisponibile.

Cumpara in pachete mari

CantitatePret unitarPer Tub
30 - 30€ 2,89€ 86,70
60+€ 2,62€ 78,60

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Documente tehnice

Specificatii

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

187 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1630pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.72mJ

Tara de origine

Malaysia

Detalii produs

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.