Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonMaximum Continuous Collector Current
26 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
130 W
Tip pachet
TO-220
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
10.36 x 4.57 x 15.95mm
Temperatura maxima de lucru
+175 °C
Energy Rating
0.81mJ
Frecventa minima de auto-rezonanta
-40 °C
Gate Capacitance
860pF
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 9,70
€ 0,97 Buc. (Intr-un pachet de 10) (fara TVA)
€ 11,74
€ 1,174 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 9,70
€ 0,97 Buc. (Intr-un pachet de 10) (fara TVA)
€ 11,74
€ 1,174 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 10 - 40 | € 0,97 | € 9,70 |
| 50 - 90 | € 0,91 | € 9,10 |
| 100 - 240 | € 0,87 | € 8,70 |
| 250 - 490 | € 0,82 | € 8,20 |
| 500+ | € 0,76 | € 7,60 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonMaximum Continuous Collector Current
26 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
130 W
Tip pachet
TO-220
Timp montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
10.36 x 4.57 x 15.95mm
Temperatura maxima de lucru
+175 °C
Energy Rating
0.81mJ
Frecventa minima de auto-rezonanta
-40 °C
Gate Capacitance
860pF
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


