Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
428 W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
16.13 x 5.21 x 21.1mm
Frecventa minima de auto-rezonanta
-40 °C
Gate Capacitance
4620pF
Temperatura maxima de lucru
+175 °C
Energy Rating
6.2mJ
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 7,85
Buc. (Intr-un pachet de 2) (fara TVA)
€ 9,342
Buc. (Intr-un pachet de 2) (cu TVA)
2
€ 7,85
Buc. (Intr-un pachet de 2) (fara TVA)
€ 9,342
Buc. (Intr-un pachet de 2) (cu TVA)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 8 | € 7,85 | € 15,70 |
10 - 18 | € 6,63 | € 13,26 |
20 - 48 | € 6,14 | € 12,28 |
50 - 98 | € 5,73 | € 11,46 |
100+ | € 5,25 | € 10,50 |
Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
428 W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
16.13 x 5.21 x 21.1mm
Frecventa minima de auto-rezonanta
-40 °C
Gate Capacitance
4620pF
Temperatura maxima de lucru
+175 °C
Energy Rating
6.2mJ
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.