Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
250 W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
16.13 x 5.21 x 21.1mm
Temperatura minima de lucru
-40 °C
Gate Capacitance
2500pF
Temperatura maxima de lucru
+175 °C
Energy Rating
0.46mJ
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 3,87
Buc. (Intr-un pachet de 4) (fara TVA)
€ 4,605
Buc. (Intr-un pachet de 4) (cu TVA)
4
€ 3,87
Buc. (Intr-un pachet de 4) (fara TVA)
€ 4,605
Buc. (Intr-un pachet de 4) (cu TVA)
4
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
4 - 16 | € 3,87 | € 15,48 |
20 - 36 | € 3,35 | € 13,40 |
40 - 96 | € 3,10 | € 12,40 |
100 - 196 | € 2,85 | € 11,40 |
200+ | € 2,64 | € 10,56 |
Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
250 W
Tip pachet
TO-247
Montare
Through Hole
Channel Type
N
Numar pini
3
Transistor Configuration
Single
Dimensiuni
16.13 x 5.21 x 21.1mm
Temperatura minima de lucru
-40 °C
Gate Capacitance
2500pF
Temperatura maxima de lucru
+175 °C
Energy Rating
0.46mJ
Detalii produs
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.