Documente tehnice
Specificatii
Marca
InfineonMemory Size
1Mbit
Organisation
128K x 8 bit
Interfata
SPI
Data Bus Width
8bit
Maximum Random Access Time
18ns
Montare
Surface Mount
Tip pachet
SOIC
Numar pini
8
Dimensiuni
4.97 x 3.98 x 1.47mm
Lungime
4.97mm
Maximum Operating Supply Voltage
3.6 V
Latime
3.98mm
Inaltime
1.47mm
Temperatura maxima de lucru
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
128K
Frecventa minima de auto-rezonanta
-40 °C
Minimum Operating Supply Voltage
2 V
Detalii produs
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 13,75
Buc. (fara TVA)
€ 16,36
Buc. (cu TVA)
1
€ 13,75
Buc. (fara TVA)
€ 16,36
Buc. (cu TVA)
1
Cumpara in pachete mari
Cantitate | Pret unitar |
---|---|
1 - 9 | € 13,75 |
10 - 24 | € 10,68 |
25 - 99 | € 10,33 |
100 - 499 | € 9,95 |
500+ | € 9,60 |
Documente tehnice
Specificatii
Marca
InfineonMemory Size
1Mbit
Organisation
128K x 8 bit
Interfata
SPI
Data Bus Width
8bit
Maximum Random Access Time
18ns
Montare
Surface Mount
Tip pachet
SOIC
Numar pini
8
Dimensiuni
4.97 x 3.98 x 1.47mm
Lungime
4.97mm
Maximum Operating Supply Voltage
3.6 V
Latime
3.98mm
Inaltime
1.47mm
Temperatura maxima de lucru
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
128K
Frecventa minima de auto-rezonanta
-40 °C
Minimum Operating Supply Voltage
2 V
Detalii produs
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.