Documente tehnice
Specificatii
Marca
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interfata
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Timp montare
Surface Mount
Tip pachet
DFN
Numar pini
8
Dimensiuni
4 x 4.5 x 0.7mm
Lungime
4.5mm
Latime
4mm
Maximum Operating Supply Voltage
3.6 V
Inaltime
0.7mm
Temperatura maxima de lucru
+85 °C
Number of Words
32K
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2 V
Number of Bits per Word
8bit
Detalii produs
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Incercati din nou mai tarziu
€ 16,82
€ 8,41 Buc. (Intr-un pachet de 2) (fara TVA)
€ 20,02
€ 10,008 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 16,82
€ 8,41 Buc. (Intr-un pachet de 2) (fara TVA)
€ 20,02
€ 10,008 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 8 | € 8,41 | € 16,82 |
10 - 18 | € 6,50 | € 13,00 |
20 - 98 | € 6,28 | € 12,56 |
100 - 498 | € 6,07 | € 12,14 |
500+ | € 5,88 | € 11,76 |
Documente tehnice
Specificatii
Marca
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interfata
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Timp montare
Surface Mount
Tip pachet
DFN
Numar pini
8
Dimensiuni
4 x 4.5 x 0.7mm
Lungime
4.5mm
Latime
4mm
Maximum Operating Supply Voltage
3.6 V
Inaltime
0.7mm
Temperatura maxima de lucru
+85 °C
Number of Words
32K
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2 V
Number of Bits per Word
8bit
Detalii produs
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.