Documente tehnice
Specificatii
Marca
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interfata
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Timp montare
Surface Mount
Tip pachet
DFN
Numar pini
8
Dimensiuni
4 x 4.5 x 0.7mm
Lungime
4.5mm
Latime
4mm
Maximum Operating Supply Voltage
3.6 V
Inaltime
0.7mm
Temperatura maxima de lucru
+85 °C
Number of Words
32K
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2 V
Number of Bits per Word
8bit
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 16,08
€ 8,04 Buc. (Intr-un pachet de 2) (fara TVA)
€ 19,14
€ 9,568 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 16,08
€ 8,04 Buc. (Intr-un pachet de 2) (fara TVA)
€ 19,14
€ 9,568 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
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Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 8 | € 8,04 | € 16,08 |
10 - 18 | € 6,13 | € 12,26 |
20 - 98 | € 5,92 | € 11,84 |
100 - 498 | € 5,71 | € 11,42 |
500+ | € 5,52 | € 11,04 |
Documente tehnice
Specificatii
Marca
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interfata
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Timp montare
Surface Mount
Tip pachet
DFN
Numar pini
8
Dimensiuni
4 x 4.5 x 0.7mm
Lungime
4.5mm
Latime
4mm
Maximum Operating Supply Voltage
3.6 V
Inaltime
0.7mm
Temperatura maxima de lucru
+85 °C
Number of Words
32K
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2 V
Number of Bits per Word
8bit
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.