Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonMemory Size
128kbit
Organisation
16k x 8 bit
Interfata
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Timp montare
Surface Mount
Tip pachet
SOIC
Numar pini
8
Dimensiuni
4.97 x 3.98 x 1.47mm
Lungime
4.97mm
Maximum Operating Supply Voltage
3.6 V
Latime
3.98mm
Inaltime
1.47mm
Temperatura maxima de lucru
+85 °C
Number of Words
16k
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2 V
Number of Bits per Word
8bit
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 8,26
€ 4,13 Buc. (Intr-un pachet de 2) (fara TVA)
€ 9,83
€ 4,915 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 8,26
€ 4,13 Buc. (Intr-un pachet de 2) (fara TVA)
€ 9,83
€ 4,915 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonMemory Size
128kbit
Organisation
16k x 8 bit
Interfata
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Timp montare
Surface Mount
Tip pachet
SOIC
Numar pini
8
Dimensiuni
4.97 x 3.98 x 1.47mm
Lungime
4.97mm
Maximum Operating Supply Voltage
3.6 V
Latime
3.98mm
Inaltime
1.47mm
Temperatura maxima de lucru
+85 °C
Number of Words
16k
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2 V
Number of Bits per Word
8bit
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.