Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interfata
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Timp montare
Surface Mount
Tip pachet
DFN
Numar pini
8
Dimensiuni
4 x 4.5 x 0.7mm
Lungime
4.5mm
Latime
4mm
Maximum Operating Supply Voltage
3.65 V
Inaltime
0.7mm
Temperatura maxima de lucru
+85 °C
Number of Words
8K
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 7,06
€ 3,53 Buc. (Intr-un pachet de 2) (fara TVA)
€ 8,40
€ 4,201 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 7,06
€ 3,53 Buc. (Intr-un pachet de 2) (fara TVA)
€ 8,40
€ 4,201 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
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Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 8 | € 3,53 | € 7,06 |
10 - 48 | € 3,03 | € 6,06 |
50 - 98 | € 2,92 | € 5,84 |
100 - 498 | € 2,59 | € 5,18 |
500+ | € 2,45 | € 4,90 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interfata
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Timp montare
Surface Mount
Tip pachet
DFN
Numar pini
8
Dimensiuni
4 x 4.5 x 0.7mm
Lungime
4.5mm
Latime
4mm
Maximum Operating Supply Voltage
3.65 V
Inaltime
0.7mm
Temperatura maxima de lucru
+85 °C
Number of Words
8K
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.