Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonMemory Size
4kbit
Organisation
512 x 8 bit
Interfata
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Timp montare
Surface Mount
Tip pachet
SOIC
Numar pini
8
Dimensiuni
4.97 x 3.98 x 1.48mm
Lungime
4.97mm
Maximum Operating Supply Voltage
5.5 V
Latime
3.98mm
Inaltime
1.48mm
Temperatura maxima de lucru
+85 °C
Automotive Standard
AEC-Q100
Number of Words
512
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 9,40
€ 1,88 Buc. (Intr-un pachet de 5) (fara TVA)
€ 11,19
€ 2,237 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 9,40
€ 1,88 Buc. (Intr-un pachet de 5) (fara TVA)
€ 11,19
€ 2,237 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
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Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 10 | € 1,88 | € 9,40 |
15 - 25 | € 1,81 | € 9,05 |
30 - 95 | € 1,73 | € 8,65 |
100 - 495 | € 1,63 | € 8,15 |
500+ | € 1,50 | € 7,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonMemory Size
4kbit
Organisation
512 x 8 bit
Interfata
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Timp montare
Surface Mount
Tip pachet
SOIC
Numar pini
8
Dimensiuni
4.97 x 3.98 x 1.48mm
Lungime
4.97mm
Maximum Operating Supply Voltage
5.5 V
Latime
3.98mm
Inaltime
1.48mm
Temperatura maxima de lucru
+85 °C
Automotive Standard
AEC-Q100
Number of Words
512
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
4.5 V
Number of Bits per Word
8bit
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.