Documente tehnice
Specificatii
Marca
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interfata
Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
450ns
Timp montare
Surface Mount
Tip pachet
SOIC
Numar pini
8
Dimensiuni
4.97 x 3.98 x 1.47mm
Lungime
4.97mm
Maximum Operating Supply Voltage
3.6 V
Latime
3.98mm
Inaltime
1.47mm
Temperatura maxima de lucru
+85 °C
Number of Bits per Word
8bit
Number of Words
32K
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2 V
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 15,24
€ 7,62 Buc. (Intr-un pachet de 2) (fara TVA)
€ 18,14
€ 9,068 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 15,24
€ 7,62 Buc. (Intr-un pachet de 2) (fara TVA)
€ 18,14
€ 9,068 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
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Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 8 | € 7,62 | € 15,24 |
10 - 18 | € 6,00 | € 12,00 |
20 - 98 | € 5,79 | € 11,58 |
100 - 498 | € 5,58 | € 11,16 |
500+ | € 5,39 | € 10,78 |
Documente tehnice
Specificatii
Marca
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interfata
Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
450ns
Timp montare
Surface Mount
Tip pachet
SOIC
Numar pini
8
Dimensiuni
4.97 x 3.98 x 1.47mm
Lungime
4.97mm
Maximum Operating Supply Voltage
3.6 V
Latime
3.98mm
Inaltime
1.47mm
Temperatura maxima de lucru
+85 °C
Number of Bits per Word
8bit
Number of Words
32K
Temperatura minima de lucru
-40 °C
Minimum Operating Supply Voltage
2 V
Detalii produs
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.