Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
95 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
250 W
Tip pachet
EASY2B
Configuration
Series
Montare
PCB Mount
Channel Type
N
Numar pini
27
Switching Speed
1MHz
Transistor Configuration
Series
Dimensiuni
56.7 x 48 x 12mm
Frecventa minima de auto-rezonanta
-40 °C
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 56,09
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€ 66,747
Buc. (Intr-o cutie de 15) (cu TVA)
15
€ 56,09
Buc. (Intr-o cutie de 15) (fara TVA)
€ 66,747
Buc. (Intr-o cutie de 15) (cu TVA)
15
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Cantitate | Pret unitar | Per Cutie |
---|---|---|
15 - 15 | € 56,09 | € 841,35 |
30+ | € 51,51 | € 772,65 |
Documente tehnice
Specificatii
Marca
InfineonMaximum Continuous Collector Current
95 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
250 W
Tip pachet
EASY2B
Configuration
Series
Montare
PCB Mount
Channel Type
N
Numar pini
27
Switching Speed
1MHz
Transistor Configuration
Series
Dimensiuni
56.7 x 48 x 12mm
Frecventa minima de auto-rezonanta
-40 °C
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.