Documente tehnice
Specificatii
Marca
InfineonMemory Size
4Mbit
Organisation
512K x 8 bit
Number of Words
512K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Timing Type
Asynchronous
Montare
Surface Mount
Tip pachet
SOIC
Numar pini
32
Dimensiuni
20.75 x 11.43 x 2.81mm
Inaltime
2.81mm
Maximum Operating Supply Voltage
5.5 V
Latime
11.43mm
Frecventa minima de auto-rezonanta
-40 °C
Minimum Operating Supply Voltage
4.5 V
Temperatura maxima de lucru
+85 °C
Lungime
20.75mm
Detalii produs
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 9,27
Buc. (Intr-un pachet de 2) (fara TVA)
€ 11,031
Buc. (Intr-un pachet de 2) (cu TVA)
2
€ 9,27
Buc. (Intr-un pachet de 2) (fara TVA)
€ 11,031
Buc. (Intr-un pachet de 2) (cu TVA)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 8 | € 9,27 | € 18,54 |
10 - 18 | € 8,71 | € 17,42 |
20 - 98 | € 8,41 | € 16,82 |
100 - 498 | € 8,12 | € 16,24 |
500+ | € 7,87 | € 15,74 |
Documente tehnice
Specificatii
Marca
InfineonMemory Size
4Mbit
Organisation
512K x 8 bit
Number of Words
512K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Timing Type
Asynchronous
Montare
Surface Mount
Tip pachet
SOIC
Numar pini
32
Dimensiuni
20.75 x 11.43 x 2.81mm
Inaltime
2.81mm
Maximum Operating Supply Voltage
5.5 V
Latime
11.43mm
Frecventa minima de auto-rezonanta
-40 °C
Minimum Operating Supply Voltage
4.5 V
Temperatura maxima de lucru
+85 °C
Lungime
20.75mm
Detalii produs
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.