Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-323
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Latime
1.25mm
Transistor Material
Si
Dimensiune celula
OptiMOS P
Temperatura minima de lucru
-55 °C
Inaltime
0.8mm
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,16
Buc. (Pe o rola de 500) (fara TVA)
€ 0,19
Buc. (Pe o rola de 500) (cu TVA)
500
€ 0,16
Buc. (Pe o rola de 500) (fara TVA)
€ 0,19
Buc. (Pe o rola de 500) (cu TVA)
500
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
500 - 500 | € 0,16 | € 80,00 |
1000 - 2000 | € 0,15 | € 75,00 |
2500 - 4500 | € 0,14 | € 70,00 |
5000 - 12000 | € 0,13 | € 65,00 |
12500+ | € 0,12 | € 60,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
310 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-323
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Typical Gate Charge @ Vgs
0.5 nC @ 4.5 V
Latime
1.25mm
Transistor Material
Si
Dimensiune celula
OptiMOS P
Temperatura minima de lucru
-55 °C
Inaltime
0.8mm
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.