Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Dimensiune celula
SIPMOS
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Number of Elements per Chip
1
Latime
1.3mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Detalii produs
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,11
Buc. (Pe o rola de 500) (fara TVA)
€ 0,131
Buc. (Pe o rola de 500) (cu TVA)
500
€ 0,11
Buc. (Pe o rola de 500) (fara TVA)
€ 0,131
Buc. (Pe o rola de 500) (cu TVA)
500
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
500 - 500 | € 0,11 | € 55,00 |
1000 - 2000 | € 0,08 | € 40,00 |
2500 - 4500 | € 0,07 | € 35,00 |
5000 - 12000 | € 0,07 | € 35,00 |
12500+ | € 0,06 | € 30,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Dimensiune celula
SIPMOS
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Number of Elements per Chip
1
Latime
1.3mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1mm
Detalii produs
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.