Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
190 mA
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
0.6 nC @ 10 V
Latime
1.3mm
Transistor Material
Si
Dimensiune celula
OptiMOS
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,12
Buc. (Pe o rola de 500) (fara TVA)
€ 0,143
Buc. (Pe o rola de 500) (cu TVA)
500
€ 0,12
Buc. (Pe o rola de 500) (fara TVA)
€ 0,143
Buc. (Pe o rola de 500) (cu TVA)
500
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
500 - 500 | € 0,12 | € 60,00 |
1000 - 2000 | € 0,08 | € 40,00 |
2500 - 4500 | € 0,07 | € 35,00 |
5000 - 12000 | € 0,07 | € 35,00 |
12500+ | € 0,06 | € 30,00 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
190 mA
Maximum Drain Source Voltage
100 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
0.6 nC @ 10 V
Latime
1.3mm
Transistor Material
Si
Dimensiune celula
OptiMOS
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.