Documente tehnice
Specificatii
Marca
InfineonTransistor Type
PNP
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
2.2 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1.8 V
Maximum Collector Cut-off Current
10µA
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Base Current
100mA
Inaltime
1.6mm
Latime
3.5mm
Maximum Power Dissipation
1.5 W
Dimensiuni
6.5 x 3.5 x 1.6mm
Tara de origine
Malaysia
Detalii produs
Darlington Transistors, Infineon
Bipolar Transistors, Infineon
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P.O.A.
1000
P.O.A.
1000
Documente tehnice
Specificatii
Marca
InfineonTransistor Type
PNP
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
2.2 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1.8 V
Maximum Collector Cut-off Current
10µA
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Base Current
100mA
Inaltime
1.6mm
Latime
3.5mm
Maximum Power Dissipation
1.5 W
Dimensiuni
6.5 x 3.5 x 1.6mm
Tara de origine
Malaysia
Detalii produs