Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
4
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2.2 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1.8 V
Dimensiuni
6.5 x 3.5 x 1.6mm
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Latime
3.5mm
Frecventa minima de auto-rezonanta
-65 °C
Inaltime
1.6mm
P.O.A.
Standard
1
P.O.A.
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
4
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2.2 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1.8 V
Dimensiuni
6.5 x 3.5 x 1.6mm
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Latime
3.5mm
Frecventa minima de auto-rezonanta
-65 °C
Inaltime
1.6mm


