Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
45 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2.2 V
Maximum Collector Base Voltage
60 V
Maximum Collector Emitter Saturation Voltage
1.8 V
Maximum Collector Cut-off Current
10µA
Maximum Power Dissipation
1.5 W
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Inaltime
1.6mm
Latime
3.5mm
Dimensiuni
6.5 x 3.5 x 1.6mm
Detalii produs
Darlington Transistors, Infineon
Bipolar Transistors, Infineon
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Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
45 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
2.2 V
Maximum Collector Base Voltage
60 V
Maximum Collector Emitter Saturation Voltage
1.8 V
Maximum Collector Cut-off Current
10µA
Maximum Power Dissipation
1.5 W
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Inaltime
1.6mm
Latime
3.5mm
Dimensiuni
6.5 x 3.5 x 1.6mm
Detalii produs