Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
20 V
Dimensiune celula
BSL207SP
Tip pachet
TSOP6
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
12 V
Latime
1.6mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
13.3 nC @ 4.5 V
Inaltime
0.95mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
20 V
Dimensiune celula
BSL207SP
Tip pachet
TSOP6
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
12 V
Latime
1.6mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
13.3 nC @ 4.5 V
Inaltime
0.95mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V