Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
15.2 A
Maximum Drain Source Voltage
200 V
Tip pachet
TDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.35mm
Number of Elements per Chip
1
Transistor Material
Si
Lungime
6.1mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.1mm
Dimensiune celula
OptiMOS 3
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Incercati din nou mai tarziu
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Buc. (Pe o rola de 5000) (fara TVA)
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Buc. (Pe o rola de 5000) (cu TVA)
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€ 1,03
Buc. (Pe o rola de 5000) (fara TVA)
€ 1,226
Buc. (Pe o rola de 5000) (cu TVA)
5000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
15.2 A
Maximum Drain Source Voltage
200 V
Tip pachet
TDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.35mm
Number of Elements per Chip
1
Transistor Material
Si
Lungime
6.1mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.1mm
Dimensiune celula
OptiMOS 3
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.