Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
6.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.35mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Inaltime
1.1mm
Dimensiune celula
BSC12DN20NS3 G
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,13
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,345
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 1,13
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,345
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 1,13 | € 11,30 |
50 - 90 | € 1,03 | € 10,30 |
100 - 240 | € 0,92 | € 9,20 |
250 - 490 | € 0,82 | € 8,20 |
500+ | € 0,77 | € 7,70 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
6.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.35mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Inaltime
1.1mm
Dimensiune celula
BSC12DN20NS3 G
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V