N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC070N10NS3GATMA1

Nr. stoc RS: 178-7495Producator: InfineonCod de producator: BSC070N10NS3GATMA1
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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Tip pachet

TDSON

Timp montare

Surface Mount

Numar pini

8

Maximum Drain Source Resistance

8.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

63 nC @ 10 V

Number of Elements per Chip

1

Latime

5.35mm

Temperatura maxima de lucru

+150 °C

Transistor Material

Si

Lungime

6.1mm

Dimensiune celula

OptiMOS 3

Temperatura minima de lucru

-55 °C

Inaltime

1.1mm

Forward Diode Voltage

1.2V

Detalii produs

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Informatii despre stoc temporar indisponibile.

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Informatii despre stoc temporar indisponibile.

€ 0,87

Buc. (Pe o rola de 5000) (fara TVA)

€ 1,035

Buc. (Pe o rola de 5000) (cu TVA)

N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC070N10NS3GATMA1

€ 0,87

Buc. (Pe o rola de 5000) (fara TVA)

€ 1,035

Buc. (Pe o rola de 5000) (cu TVA)

N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC070N10NS3GATMA1
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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Tip pachet

TDSON

Timp montare

Surface Mount

Numar pini

8

Maximum Drain Source Resistance

8.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

63 nC @ 10 V

Number of Elements per Chip

1

Latime

5.35mm

Temperatura maxima de lucru

+150 °C

Transistor Material

Si

Lungime

6.1mm

Dimensiune celula

OptiMOS 3

Temperatura minima de lucru

-55 °C

Inaltime

1.1mm

Forward Diode Voltage

1.2V

Detalii produs

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.