Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Tip pachet
TDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Temperatura maxima de lucru
+150 °C
Lungime
5.49mm
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Latime
6.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Dimensiune celula
BSC050N03LS G
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P.O.A.
5000
P.O.A.
5000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Tip pachet
TDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Temperatura maxima de lucru
+150 °C
Lungime
5.49mm
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Latime
6.35mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Dimensiune celula
BSC050N03LS G