N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON Infineon BSC047N08NS3GATMA1

Nr. stoc RS: 178-7494Producator: InfineonCod de producator: BSC047N08NS3GATMA1
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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

80 V

Tip pachet

TDSON

Timp montare

Surface Mount

Numar pini

8

Maximum Drain Source Resistance

8.9 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Latime

5.35mm

Number of Elements per Chip

1

Temperatura maxima de lucru

+150 °C

Transistor Material

Si

Lungime

6.1mm

Typical Gate Charge @ Vgs

52 nC @ 10 V

Inaltime

1.1mm

Dimensiune celula

OptiMOS 3

Temperatura minima de lucru

-55 °C

Forward Diode Voltage

1.2V

Detalii produs

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Informatii despre stoc temporar indisponibile.

Incercati din nou mai tarziu

Informatii despre stoc temporar indisponibile.

€ 1,49

Buc. (Pe o rola de 5000) (fara TVA)

€ 1,773

Buc. (Pe o rola de 5000) (cu TVA)

N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON Infineon BSC047N08NS3GATMA1

€ 1,49

Buc. (Pe o rola de 5000) (fara TVA)

€ 1,773

Buc. (Pe o rola de 5000) (cu TVA)

N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON Infineon BSC047N08NS3GATMA1
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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

80 V

Tip pachet

TDSON

Timp montare

Surface Mount

Numar pini

8

Maximum Drain Source Resistance

8.9 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Latime

5.35mm

Number of Elements per Chip

1

Temperatura maxima de lucru

+150 °C

Transistor Material

Si

Lungime

6.1mm

Typical Gate Charge @ Vgs

52 nC @ 10 V

Inaltime

1.1mm

Dimensiune celula

OptiMOS 3

Temperatura minima de lucru

-55 °C

Forward Diode Voltage

1.2V

Detalii produs

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.