Documente tehnice
Specificatii
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Numar pini
8
Transistor Configuration
Single
Forward Diode Voltage
1.2V
Timp montare
Surface Mount
Temperatura maxima de lucru
+150 °C
Maximum Drain Source Voltage
60 V
Inaltime
1.1mm
Dimensiuni
59 x 92 x 18mm
Lungime
6.1mm
Latime
5.35mm
Maximum Power Dissipation
69 W
Maximum Continuous Drain Current
100 A
Maximum Drain Source Resistance
5.9 mΩ
Marca
InfineonTip pachet
TDSON
Typical Gate Charge @ Vgs
27 nC @ 10 V
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Documente tehnice
Specificatii
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Numar pini
8
Transistor Configuration
Single
Forward Diode Voltage
1.2V
Timp montare
Surface Mount
Temperatura maxima de lucru
+150 °C
Maximum Drain Source Voltage
60 V
Inaltime
1.1mm
Dimensiuni
59 x 92 x 18mm
Lungime
6.1mm
Latime
5.35mm
Maximum Power Dissipation
69 W
Maximum Continuous Drain Current
100 A
Maximum Drain Source Resistance
5.9 mΩ
Marca
InfineonTip pachet
TDSON
Typical Gate Charge @ Vgs
27 nC @ 10 V