Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
6.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.49mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Dimensiune celula
BSC035N10NS5
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.1V
Inaltime
1.1mm
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,78
Buc. (Intr-un pachet de 10) (fara TVA)
€ 3,308
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 2,78
Buc. (Intr-un pachet de 10) (fara TVA)
€ 3,308
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 10 | € 2,78 | € 27,80 |
20 - 40 | € 2,19 | € 21,90 |
50 - 90 | € 2,04 | € 20,40 |
100 - 240 | € 1,89 | € 18,90 |
250+ | € 1,71 | € 17,10 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
6.35mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.49mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Dimensiune celula
BSC035N10NS5
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.1V
Inaltime
1.1mm