Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
25 V
Tip pachet
TDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Latime
6.35mm
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Lungime
5.35mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Inaltime
1.1mm
Dimensiune celula
OptiMOS
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Tara de origine
Malaysia
Detalii produs
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
25 V
Tip pachet
TDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Latime
6.35mm
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Lungime
5.35mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Inaltime
1.1mm
Dimensiune celula
OptiMOS
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Tara de origine
Malaysia
Detalii produs
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.