Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
6.1mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Latime
5.35mm
Dimensiune celula
OptiMOS P
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Inaltime
1.1mm
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Incercati din nou mai tarziu
€ 1,41
Buc. (Pe o rola de 5000) (fara TVA)
€ 1,678
Buc. (Pe o rola de 5000) (cu TVA)
5000
€ 1,41
Buc. (Pe o rola de 5000) (fara TVA)
€ 1,678
Buc. (Pe o rola de 5000) (cu TVA)
5000
Documente tehnice
Specificatii
Marca
InfineonChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Tip pachet
TDSON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
6.1mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Latime
5.35mm
Dimensiune celula
OptiMOS P
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Inaltime
1.1mm
Detalii produs
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.