N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC028N06NSATMA1

Nr. stoc RS: 178-7485Producator: InfineonCod de producator: BSC028N06NSATMA1
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Specificatii

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.2 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.1mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Height

1.1mm

Series

OptiMOS 5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalii produs

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Informatii despre stoc temporar indisponibile.

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Informatii despre stoc temporar indisponibile.

€ 1,66

Buc. (Pe o rola de 5000) (fara TVA)

€ 1,975

Buc. (Pe o rola de 5000) (cu TVA)

N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC028N06NSATMA1

€ 1,66

Buc. (Pe o rola de 5000) (fara TVA)

€ 1,975

Buc. (Pe o rola de 5000) (cu TVA)

N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC028N06NSATMA1
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Documente tehnice

Specificatii

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.2 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.1mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Height

1.1mm

Series

OptiMOS 5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalii produs

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.