Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Tip pachet
TDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
1.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
6.15mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.15mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Dimensiune celula
BSC014N04LS
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.1mm
Forward Diode Voltage
1V
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,50
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,785
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 1,50
Buc. (Intr-un pachet de 10) (fara TVA)
€ 1,785
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 40 | € 1,50 | € 15,00 |
50 - 90 | € 1,17 | € 11,70 |
100 - 240 | € 1,09 | € 10,90 |
250 - 490 | € 1,01 | € 10,10 |
500+ | € 0,93 | € 9,30 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Tip pachet
TDSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
1.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Latime
6.15mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.15mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Dimensiune celula
BSC014N04LS
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.1mm
Forward Diode Voltage
1V