Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum DC Collector Current
25 mA
Maximum Collector Emitter Voltage
15 V
Tip pachet
SOT-23
Montare
Surface Mount
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
25 V
Maximum Emitter Base Voltage
2.5 V
Maximum Operating Frequency
2.5 GHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
2.9 x 1.3 x 0.9mm
Detalii produs
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Informatii indisponibile despre stoc
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P.O.A.
250
P.O.A.
250
Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum DC Collector Current
25 mA
Maximum Collector Emitter Voltage
15 V
Tip pachet
SOT-23
Montare
Surface Mount
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
25 V
Maximum Emitter Base Voltage
2.5 V
Maximum Operating Frequency
2.5 GHz
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
2.9 x 1.3 x 0.9mm
Detalii produs