Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
12 V
Tip pachet
SOT-23 (TO-236AB)
Timp montare
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
1 x 3 x 1.4mm
Temperatura maxima de lucru
+175 °C
Tara de origine
China
Detalii produs
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
P.O.A.
Buc. (Pe o rola de 3000) (fara TVA)
3000
P.O.A.
Buc. (Pe o rola de 3000) (fara TVA)
3000
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Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
12 V
Tip pachet
SOT-23 (TO-236AB)
Timp montare
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
15 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
1 x 3 x 1.4mm
Temperatura maxima de lucru
+175 °C
Tara de origine
China
Detalii produs