Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum DC Collector Current
80 mA
Maximum Collector Emitter Voltage
12 V
Tip pachet
SOT-323 (SC-70)
Timp montare
Surface Mount
Maximum Power Dissipation
580 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
8 GHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
2 x 1.25 x 0.8mm
Temperatura maxima de lucru
+150 °C
Detalii produs
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,21
Buc. (Intr-un pachet de 100) (fara TVA)
€ 0,25
Buc. (Intr-un pachet de 100) (cu TVA)
100
€ 0,21
Buc. (Intr-un pachet de 100) (fara TVA)
€ 0,25
Buc. (Intr-un pachet de 100) (cu TVA)
100
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
100 - 400 | € 0,21 | € 21,00 |
500 - 900 | € 0,14 | € 14,00 |
1000 - 2400 | € 0,13 | € 13,00 |
2500 - 4900 | € 0,12 | € 12,00 |
5000+ | € 0,11 | € 11,00 |
Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum DC Collector Current
80 mA
Maximum Collector Emitter Voltage
12 V
Tip pachet
SOT-323 (SC-70)
Timp montare
Surface Mount
Maximum Power Dissipation
580 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
8 GHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
2 x 1.25 x 0.8mm
Temperatura maxima de lucru
+150 °C
Detalii produs