Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum DC Collector Current
150 mA
Maximum Collector Emitter Voltage
12 V
Tip pachet
SOT-143
Timp montare
Surface Mount
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
7.5 GHz
Numar pini
4
Number of Elements per Chip
1
Dimensiuni
2.9 x 1.3 x 0.9mm
Temperatura maxima de lucru
+150 °C
Detalii produs
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum DC Collector Current
150 mA
Maximum Collector Emitter Voltage
12 V
Tip pachet
SOT-143
Timp montare
Surface Mount
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
7.5 GHz
Numar pini
4
Number of Elements per Chip
1
Dimensiuni
2.9 x 1.3 x 0.9mm
Temperatura maxima de lucru
+150 °C
Detalii produs