Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Tip pachet
SOT-89
Timp montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
10µA
Maximum Power Dissipation
1 W
Temperatura maxima de lucru
+150 °C
Lungime
4.5mm
Base Current
100mA
Inaltime
1.5mm
Latime
2.5mm
Dimensiuni
4.5 x 2.5 x 1.5mm
Detalii produs
Darlington Transistors, Infineon
Bipolar Transistors, Infineon
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
100
P.O.A.
100
Documente tehnice
Specificatii
Marca
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Tip pachet
SOT-89
Timp montare
Surface Mount
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
10µA
Maximum Power Dissipation
1 W
Temperatura maxima de lucru
+150 °C
Lungime
4.5mm
Base Current
100mA
Inaltime
1.5mm
Latime
2.5mm
Dimensiuni
4.5 x 2.5 x 1.5mm
Detalii produs