Documente tehnice
Specificatii
Marca
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Tip pachet
SOT-363 (SC-88)
Timp montare
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
250 MHz
Numar pini
6
Number of Elements per Chip
2
Dimensiuni
2 x 1.25 x 0.8mm
Temperatura maxima de lucru
+150 °C
Detalii produs
Dual Matched Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,13
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,155
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,13
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,155
Buc. (Pe o rola de 3000) (cu TVA)
3000
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
3000 - 3000 | € 0,13 | € 390,00 |
6000 - 6000 | € 0,12 | € 360,00 |
9000+ | € 0,11 | € 330,00 |
Documente tehnice
Specificatii
Marca
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Tip pachet
SOT-363 (SC-88)
Timp montare
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
250 MHz
Numar pini
6
Number of Elements per Chip
2
Dimensiuni
2 x 1.25 x 0.8mm
Temperatura maxima de lucru
+150 °C
Detalii produs