Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
55 V
Tip pachet
D2PAK
Montare
Surface Mount
Numar pini
2 + Tab
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Lungime
10.67mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
9.65mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.3V
Inaltime
4.83mm
Dimensiune celula
AUIRFZ24N
Frecventa minima de auto-rezonanta
-55 °C
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
55 V
Tip pachet
D2PAK
Montare
Surface Mount
Numar pini
2 + Tab
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Lungime
10.67mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
9.65mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Forward Diode Voltage
1.3V
Inaltime
4.83mm
Dimensiune celula
AUIRFZ24N
Frecventa minima de auto-rezonanta
-55 °C