Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
99 A
Maximum Drain Source Voltage
150 V
Tip pachet
TO-262
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
12.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
77 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Latime
9.65mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Automotive Standard
AEC-Q101
Inaltime
4.83mm
Dimensiune celula
AUIRF
Frecventa minima de auto-rezonanta
-55 °C
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Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
99 A
Maximum Drain Source Voltage
150 V
Tip pachet
TO-262
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
12.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
77 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Latime
9.65mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Automotive Standard
AEC-Q101
Inaltime
4.83mm
Dimensiune celula
AUIRF
Frecventa minima de auto-rezonanta
-55 °C