Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
99 A
Maximum Drain Source Voltage
150 V
Tip pachet
TO-262
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
12.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
9.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
77 nC @ 10 V
Inaltime
4.83mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Automotive Standard
AEC-Q101
Dimensiune celula
AUIRF
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
50
P.O.A.
50
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
99 A
Maximum Drain Source Voltage
150 V
Tip pachet
TO-262
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
12.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
9.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
77 nC @ 10 V
Inaltime
4.83mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Automotive Standard
AEC-Q101
Dimensiune celula
AUIRF