Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
55 V
Serie
HEXFET
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
0.011 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,93
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,487
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 2,93
Buc. (Intr-un pachet de 5) (fara TVA)
€ 3,487
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 2,93 | € 14,65 |
25 - 45 | € 2,69 | € 13,45 |
50 - 120 | € 2,41 | € 12,05 |
125 - 245 | € 2,17 | € 10,85 |
250+ | € 2,05 | € 10,25 |
Documente tehnice
Specificatii
Marca
InfineonChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
55 V
Serie
HEXFET
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
0.011 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si