Documente tehnice
Specificatii
Marca
Fuji ElectricMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
500 W
Tip pachet
P 610
Configuration
3 Phase
Montare
PCB Mount
Channel Type
N
Numar pini
22
Transistor Configuration
3 Phase
Dimensiuni
109 x 88 x 22mm
Frecventa minima de auto-rezonanta
-20 °C
Temperatura maxima de lucru
+100 °C
Detalii produs
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Documente tehnice
Specificatii
Marca
Fuji ElectricMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
500 W
Tip pachet
P 610
Configuration
3 Phase
Montare
PCB Mount
Channel Type
N
Numar pini
22
Transistor Configuration
3 Phase
Dimensiuni
109 x 88 x 22mm
Frecventa minima de auto-rezonanta
-20 °C
Temperatura maxima de lucru
+100 °C
Detalii produs
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.