Documente tehnice
Specificatii
Channel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
105 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
6.9 nC @ 4.5 V
Latime
1.7mm
Transistor Material
Si
Serie
PowerTrench
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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P.O.A.
Impachetare pentru productie (Rola)
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P.O.A.
Impachetare pentru productie (Rola)
25
Documente tehnice
Specificatii
Channel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
105 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
6.9 nC @ 4.5 V
Latime
1.7mm
Transistor Material
Si
Serie
PowerTrench
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.