Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
5.35 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
77.1 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Temperatura minima de lucru
-55 °C
Inaltime
1.5mm
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
10
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOIC
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
5.35 W
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
77.1 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5mm
Latime
4mm
Temperatura minima de lucru
-55 °C
Inaltime
1.5mm


