Documente tehnice
Specificatii
Marca
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
400 V
Tip pachet
E-Line
Timp montare
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
50
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V
Maximum Emitter Base Voltage
5 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
4.77 x 2.41 x 4.01mm
Temperatura maxima de lucru
+200 °C
Tara de origine
China
Detalii produs
High Voltage Transistors, Diodes Inc
Transistors, Diodes Inc
P.O.A.
Buc. (Intr-o punga de 2000) (fara TVA)
2000
P.O.A.
Buc. (Intr-o punga de 2000) (fara TVA)
2000
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Documente tehnice
Specificatii
Marca
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
400 V
Tip pachet
E-Line
Timp montare
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
50
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V
Maximum Emitter Base Voltage
5 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
4.77 x 2.41 x 4.01mm
Temperatura maxima de lucru
+200 °C
Tara de origine
China
Detalii produs