Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
160 V
Maximum Emitter Base Voltage
10 V
Tip pachet
E-Line
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
5000
Maximum Base Emitter Saturation Voltage
1.9 V
Maximum Collector Base Voltage
180 V
Maximum Collector Emitter Saturation Voltage
1.2 V
Maximum Collector Cut-off Current
0.00001mA
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+200 °C
Lungime
4.77mm
Inaltime
4.01mm
Latime
2.41mm
Dimensiuni
4.77 x 2.41 x 4.01mm
Tara de origine
China
Detalii produs
Darlington Transistors, Diodes Inc
Transistors, Diodes Inc
€ 1.480,00
€ 0,37 Buc. (Intr-o punga de 4000) (fara TVA)
€ 1.790,80
€ 0,448 Buc. (Intr-o punga de 4000) (cu TVA)
4000
€ 1.480,00
€ 0,37 Buc. (Intr-o punga de 4000) (fara TVA)
€ 1.790,80
€ 0,448 Buc. (Intr-o punga de 4000) (cu TVA)
Informatii despre stoc temporar indisponibile
4000
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
160 V
Maximum Emitter Base Voltage
10 V
Tip pachet
E-Line
Timp montare
Through Hole
Numar pini
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
5000
Maximum Base Emitter Saturation Voltage
1.9 V
Maximum Collector Base Voltage
180 V
Maximum Collector Emitter Saturation Voltage
1.2 V
Maximum Collector Cut-off Current
0.00001mA
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+200 °C
Lungime
4.77mm
Inaltime
4.01mm
Latime
2.41mm
Dimensiuni
4.77 x 2.41 x 4.01mm
Tara de origine
China
Detalii produs


