Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexTimp montare
Surface Mount
Tip pachet
SOT-26
Maximum Continuous Forward Current
350mA
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Series
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Numar pini
6
Maximum Forward Voltage Drop
600mV
Number of Elements per Chip
4
Diode Technology
Schottky
Peak Reverse Recovery Time
10ns
Peak Non-Repetitive Forward Surge Current
1.5A
Detalii produs
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
€ 3,75
€ 0,15 Buc. (Livrat pe rola) (fara TVA)
€ 4,54
€ 0,182 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
25
€ 3,75
€ 0,15 Buc. (Livrat pe rola) (fara TVA)
€ 4,54
€ 0,182 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
25
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
DiodesZetexTimp montare
Surface Mount
Tip pachet
SOT-26
Maximum Continuous Forward Current
350mA
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Series
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Numar pini
6
Maximum Forward Voltage Drop
600mV
Number of Elements per Chip
4
Diode Technology
Schottky
Peak Reverse Recovery Time
10ns
Peak Non-Repetitive Forward Surge Current
1.5A
Detalii produs
Schottky Barrier Diodes, 300mA to 1A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes. While possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.


