Documente tehnice
Specificatii
Marca
DiodesZetexTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
180 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
150
Maximum Base Emitter Saturation Voltage
0.9 V
Maximum Collector Base Voltage
180 V
Maximum Collector Emitter Saturation Voltage
0.25 V
Maximum Collector Cut-off Current
0.1µA
Inaltime
1.65mm
Latime
3.55mm
Maximum Power Dissipation
2 W
Temperatura minima de lucru
-55 °C
Dimensiuni
6.55 x 3.55 x 1.65mm
Temperatura maxima de lucru
+150 °C
Lungime
6.55mm
Tara de origine
China
Detalii produs
Darlington Transistors, Diodes Inc
Transistors, Diodes Inc
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,48
Buc. (Pe o rola de 1000) (fara TVA)
€ 0,571
Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 0,48
Buc. (Pe o rola de 1000) (fara TVA)
€ 0,571
Buc. (Pe o rola de 1000) (cu TVA)
1000
Documente tehnice
Specificatii
Marca
DiodesZetexTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
180 V
Maximum Emitter Base Voltage
5 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
150
Maximum Base Emitter Saturation Voltage
0.9 V
Maximum Collector Base Voltage
180 V
Maximum Collector Emitter Saturation Voltage
0.25 V
Maximum Collector Cut-off Current
0.1µA
Inaltime
1.65mm
Latime
3.55mm
Maximum Power Dissipation
2 W
Temperatura minima de lucru
-55 °C
Dimensiuni
6.55 x 3.55 x 1.65mm
Temperatura maxima de lucru
+150 °C
Lungime
6.55mm
Tara de origine
China
Detalii produs